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柯先生 
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柯小姐
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2712
· High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
· Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
Unit: mm
· 
High hFE: hFE = 70~700
· Low noise: NF = 1dB (typ.), 10dB (max)
· Complementary to 2SA1162
· Small package
Absolute Maximum Ratings (Ta = 25°C)
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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